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| Transistor 2SC5346 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SA1982 6.90.1 0.15 Unit: mm 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.45-0.05 2.50.1 0.7 4.0 s Features q q q Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.65 max. 1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 (Ta=25C) Ratings 150 150 5 100 50 1.0 150 -55 ~ +150 1cm2 Unit V V V mA mA W C C 0.45-0.05 +0.1 +0.1 2.50.5 2.50.5 2 3 Symbol VCBO VCEO VEBO ICP IC PC*1 Tj Tstg 1 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board 1.20.1 0.65 max. 0.45+0.1 - 0.05 (HW type) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Noise voltage Transition frequency Collector output capacitance (Ta=25C) Symbol ICBO VCEO VEBO hFE *1 Conditions VCB = 100V, IE = 0 IC = 0.1mA, IB = 0 IE = 10A, IC = 0 VCE = 5V, IC = 10mA IC = 30mA, IB = 3mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 1 14.50.5 Unit A V V 150 5 130 330 1 150 160 5 300 VCE(sat) NV fT Cob V mV MHz pF *1h FE Rank classification R 130 ~ 220 S 185 ~ 330 Rank hFE 1 Transistor PC -- Ta 2.0 180 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 150 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 60 1mA 2SC5346 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 -25C 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 Ta=75C VCE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) Collector current IC (mA) 1.6 120 1.2 25C 90 0.8 0.4 30 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) hFE -- IC 300 6 Cob -- VCB Collector output capacitance Cob (pF) VCE=5V f=1MHz IE=0 Ta=25C Forward current transfer ratio hFE 250 Ta=75C 5 200 25C 4 150 -25C 3 100 2 50 1 0 1 3 10 30 100 300 1000 0 1 3 10 30 100 Collector current IC (mA) Collector to base voltage VCB (V) 2 |
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